1999. 11. 30 1/1 semiconductor technical data bc559/560 epitaxial planar pnp transistor revision no : 2 low noise application. feature for complementary with npn type bc549/550. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. collector 2. base 3. emitter + _ electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage bc559 v (br)ceo i c =-10ma, i b =0 -30 - - v BC560 -45 - - collector-base breakdown voltage bc559 v (br)cbo i c =-10 a, i e =0 -30 - - v BC560 -50 - - emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5.0 - - v collector cut-off current i cbo v cb =-30v, i e =0 - - -15 na dc current gain h fe i c =-2ma, v ce =-5v 110 - 800 base-emitter voltage v be(on) i c =-2ma, v ce =-5v -0.55 - -0.7 v collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-5ma - - -0.6 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-5ma - -0.9 - v transition frequency f t i c =-10ma, v ce =-5v, f=100mhz - 300 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 7.0 pf noise figure nf i c =-200 a, v ce =-5v rg=10k u , f=1khz - - 4.0 db characteristic symbol rating unit collector-base voltage bc559 v cbo -30 v BC560 -50 collector-emitter voltage bc559 v ceo -30 v BC560 -45 emitter-base voltage v ebo -5 v collector current i c -100 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification a:110 220, b:200 450, c:420 800
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